Birkholz, Jens E.Bothe, KarstenMacdonald, DanielSchmidt, Jan2015-09-182015-09-180021-8979http://hdl.handle.net/1885/15574Iron-boron pairs in crystalline silicon are studied by measuring the recombination lifetime as a function of injection density, doping concentration, and temperature. The characteristic crossover point of the injection-level-dependent carrier lifetime curves measured before and after optical dissociation of the iron-boron pairs is analyzed to determine the energy level as well as the electron- and hole-capture cross sections of the acceptor level of iron-boron pairs, assuming known recombination parameters for interstitialiron. The doping concentration dependence of the crossover point gives an electron-capture cross section of (1.4±0.2)×10¯¹⁴cm², while the temperature dependence results in a hole-capture cross section in the range from 0.5×10¯¹⁵to2.5×10¯¹⁵cm² and an energy level of (0.26±0.02)eV below the conduction-band edge.7 pageshttp://www.sherpa.ac.uk/romeo/issn/0021-8979..."Publishers version/PDF may be used on author's personal website, institutional website or institutional repository" from SHERPA/RoMEO site (as at 18/09/15). Copyright 2005 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Applied Physics and may be found at https://dx.doi.org/10.1063/1.1897489Keywords: Contactless quasi-steady-state photoconductance (QSSPC) technique; Electronic parameters; Hole capture cross sections; Injection intensity; Doping (additives); Electron mobility; Electronic properties; Hole mobility; Mathematical models; Particle beam inj200510.1063/1.18974892015-12-11