Wang, HaoParkinson, PatrickTian, JieSaxena, DhruvMokkapati, SudhaGao, QiangPrasai, PrakashFu, LanKarouta, FouadJagadish, ChennupatiTan, Hark Hoe2015-12-10December 19781467330459http://hdl.handle.net/1885/59855A single GaAs nanowire (NW) photodetector (PD) is fabricated based on the back-to-back Schottky diode structure. Optoelectronic properties are characterized by measuring device photocurrent, and also the spectral response, which indicates our device is very sensitive and applicable as a PD.Keywords: Gaas nanowires; Measuring device; Optoelectronic properties; Schottky diodes; Spectral response; Gallium arsenide; Microelectronics; Nanowires; Photons; Schottky barrier diodes; Semiconducting gallium; Photodetectors201210.1109/COMMAD.2012.64723992016-02-24