Lei, WenParkinson, PatrickJagadish, ChennupatiTan, Hark Hoe2015-12-10December 19781467330459http://hdl.handle.net/1885/60056This work presents a pioneering study on the MOCVD droplet epitaxy of strain-free GaAs/Al0.3Ga0.7As quantum molecules. By choosing the appropriate growth conditions, GaAs quantum molecules can be obtained with controlled size and density. The formation of these molecules is mainly due to the anisotropic migration of Ga adatoms and the edge enhanced crystallization process. Furthermore, these molecules show excellent optical properties, suggesting their promising applications in devices such as infrared photodetectors and quantum information processing.Keywords: Controlled size; Crystallization process; Droplet epitaxy; Growth conditions; Infrared photodetector; Optoelectronic applications; Quantum-information processing; Strain-free; Drops; Epitaxial growth; Gallium; Microelectronics; Optical properties; Molecul201210.1109/COMMAD.2012.64723562016-02-24