Fu, Lan2018-09-112018-09-112001b2102034http://hdl.handle.net/1885/147350xi, 186 leavesen-AUQC611.8.G3F8 2001Optoelectronic devicesIon implantationQuantum wellsQuantum well intermixing in (In)GaAs/(A1)GaAs materials and devices200110.25911/5d626f4029f872018-08-31