Graphdiyne Ink for Ionic Liquid Gated Printed Transistor

Abstract

Graphdiyne‐based electronic devices have recently attracted a lot of research interest due to their excellent performance and promising application prospects in carbon electronics. Here, graphdiyne (GDY) inks are prepared by solution processing of newly grown GDY material, which is suitable for fabricating fully printed thin‐film field‐effect transistor (FET). An ionic liquid gate dielectric is used as a gate to maintain stable on/off ratios at different V SD compared to conventional SiO2 dielectric. Significantly, the GDY network combined with ionic liquid allows a general and cheap approach to achieve printed FET devices containing 2D carbon materials. Furthermore, a flexible FET on polyethylene terephthalate is developed, which still reaches a repeatable on/off ratio of more than 102. These results enable the design of wearable or large‐area carbon‐based electronics involving graphdiyne semiconductors, suggesting a promising new carbon material for novel electronic devices.