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Formation of Hierarchical InAs Nanoring/GaAs Nanowire Heterostructures

Date

Authors

Paladugu, Mohanchand
Zou, Jin
Guo, YaNan
Zhang, Xin
Joyce, Hannah J
Gao, Qiang
Jagadish, Chennupati
Kim, Yong
Tan, Hark Hoe

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Wiley-VCH Verlag GMBH

Abstract

(Figure Presented) Rings around the wire: Novel hierarchical heterostructures, assembled by radial deposition of InAs on GaAs nanowires with nonplanar side walls, result in the formation of InAs nanorings. The mechanism of formation of such structures, determined by transmission electron microscopy, involves the preferential nucleation of InAs at concave regions of the GaAs surface by capillarity effects.

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Citation

Source

Angewandte Chemie International Edition

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