Development of a vertical wrap-gated InAs FET
Date
2008
Authors
Thelander, Claes
Rehnstedt, Carl
Fröberg, Linus E
Lind, Erik
Martensson, Thomas
Caroff, Philippe
Lowgren, Truls
Ohlsson, B. Jonas
Samuelson, Lars
Wernersson, Lars-Erik
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Volume Title
Publisher
Institute of Electrical and Electronics Engineers (IEEE Inc)
Abstract
In this paper, we report on the development of a vertical wrap-gated field-effect transistor based on epitaxially grown InAs nanowires. We discuss some of the important steps involved in the growth and processing, such as nanowire position control, in sit
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Keywords
Keywords: Electric wire; Field effect transistors; Indium arsenide; MESFET devices; Nanostructured materials; Nanostructures; Nanowires; Semiconducting indium; Transistors; Alternative methods; Dielectric depositions; Epitaxial techniques; Epitaxially grown; Field- Field-effect transistor (FET); InAs; Nanowire; Surround gate; Wrap gate
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Source
IEEE Transactions on Electron Devices
Type
Journal article
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Restricted until
2037-12-31
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