The Origin of Gate Hysteresis in p-type Si-doped AIGaAs/GaAs Heterostructures

Date

2012

Authors

Carrad, D. J.
Burke, Anthony
Waddington, D. E. J.
Lyttleton, R. W.
Reece, Peter
Klochan, O.
Hamilton, Alexander Rudolf
Rai, A.
Reuter, D
Wieck, Andreas Dirk

Journal Title

Journal ISSN

Volume Title

Publisher

Institute of Electrical and Electronics Engineers (IEEE Inc)

Abstract

Gate instability and hysteresis in Si-doped p-type AlGaAs/GaAs heterostructures impedes the development of nanoscale hole devices, which are of interest for topics from quantum computing to novel spin physics. We report an extended study conducted using matched n-type and p-type heterostructures, with and without insulated gates, aimed at understanding the origin of the hysteresis. We show the hysteresis is not due to the inherent 'leakiness' of gates on p-type heterostructures, as commonly believed. Instead, hysteresis arises from a combination of GaAs surface-state trapping and charge migration in the doping layer.

Description

Keywords

Keywords: AlGaAs/GaAs; Charge migration; Doping layers; Insulated gate; Nano scale; P-type; Quantum Computing; Spin physics; Microelectronics; Quantum computers; Silicon; Hysteresis

Citation

Source

COMMAD 2012 Proceedings

Type

Conference paper

Book Title

Entity type

Access Statement

License Rights

DOI

10.1109/COMMAD.2012.6472334

Restricted until

2037-12-31