Quantum Dot Interdiffusion For Two Colour Quantum Dot Infrared Photodetectors
Abstract
An investigation into the effects of thermal interdiffusion on the characteristics of quantum dot infrared photodetectors (QDIPs) yields results useful for the creation of a two-colour QDIP. For high temperature rapid thermal annealing, quantum dot interdiffusion is induced, resulting in a large wavelength redshift in the photodetector spectral response, at the cost of a small degradation in device performance. The evaluation of a two-colour QDIP fabricated using selective suppression of interdiffusion during thermal annealing shows uniform performance in the two different detector pixels. This has implications as a useful process for the future fabrication of multi-colour QDIPs.