III-V semiconductor nanowires for optoelectronic device applications

Date

2011

Authors

Joyce, Hannah J
Gao, Qiang
Jagadish, Chennupati
Kim, Yong
Zou, Jin
Smith, Leigh M
Jackson, Howard E
Yarrison-Rice, Jan M
Parkinson, Patrick Wallace
Johnston, Michael B

Journal Title

Journal ISSN

Volume Title

Publisher

Pergamon Press

Abstract

Semiconductor nanowires have recently emerged as a new class of materials with significant potential to reveal new fundamental physics and to propel new applications in quantum electronic and optoelectronic devices. Semiconductor nanowires show exceptional promise as nanostructured materials for exploring physics in reduced dimensions and in complex geometries, as well as in one-dimensional nanowire devices. They are compatible with existing semiconductor technologies and can be tailored into unique axial and radial heterostructures. In this contribution we review the recent efforts of our international collaboration which have resulted in significant advances in the growth of exceptionally high quality IIIV nanowires and nanowire heterostructures, and major developments in understanding the electronic energy landscapes of these nanowires and the dynamics of carriers in these nanowires using photoluminescence, time-resolved photoluminescence and terahertz conductivity spectroscopy.

Description

Keywords

Keywords: Complex geometries; Conductivity spectroscopy; Electronic energies; Fundamental physics; Growth; Heterostructures; High quality; II-IV semiconductors; International collaborations; Nanowire devices; Nanowire heterostructures; New applications; Semiconduct Electron microscopy; Growth; IIIV semiconductors; Nanowire; Photoluminescence; Terahertz spectroscopy

Citation

Source

Progress in Quantum Electronics

Type

Journal article

Book Title

Entity type

Access Statement

License Rights

DOI

10.1016/j.pquantelec.2011.03.002

Restricted until

2037-12-31