Effect of crystal orientation on the implant profile of 60 keV Al into 4H-SiC crystals
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Wong-Leung, Jennifer
Janson, M. S.
Svensson, B. G.
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American Institute of Physics
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The effect of crystal orientation on the implant profile of 60 keV Al into 4H-SiC crystals was analyzed. The [112̄0] channel was found to exhibit the deepest channeling with a maximum penetration depth 45 times greater than the projected range of the ran
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Journal of Applied Physics
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