Effect of Material Structure on Photoluminescence Spectra from Silicon Nanocrystals
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Orbons, S
Spooner, M G
Elliman, Robert
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American Institute of Physics (AIP)
Abstract
Commercially prepared (100) oriented silicon wafers were oxidized to produce SiO2 layers of 5 μm, 970 nm, 650 nm and 103 nm. Each sample was annealed at 1050°C for 1 h in a forming gas ambient. The photoluminescence (PL) emission was collected with f4 o
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Journal of Applied Physics