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Ultrafast carrier trapping and recombination in highly resistive ion implanted InP

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Date

2003

Authors

Carmody, C
Jagadish, Chennupati
Gaarder, A.
Marcinkevicius, S
Tan, Hark Hoe

Journal Title

Journal ISSN

Volume Title

Publisher

American Institute of Physics (AIP)

Abstract

Ultrafast carrier trapping and recombination in highly resistive ion implanted InP were investigated. The electrical and optical features were analyzed by using Hall effect measurements and time resolved photoluminescence. Results showed that low temperature annealing yielded the fastest response times.

Description

Keywords

Keywords: Annealing; Carrier mobility; Electric conductivity; Ion implantation; Photoluminescence; Carrier trapping; Semiconducting indium phosphide

Citation

URI

http://hdl.handle.net/1885/77209

Collections

ANU Research Publications

Source

Journal of Applied Physics

Type

Journal article

Book Title

Entity type

Access Statement

License Rights

DOI

10.1063/1.1576516

Restricted until

2037-12-31

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01_Carmody_Ultrafast_carrier_trapping_and_2003.pdf (398.89 KB)

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