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Probing the Indium Nitride Lattice Locally with the Radioisotope Probe 111In/Cd

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Date

2005

Authors

Timmers, Heiko
Dogra, Rakesh
Shrestha, Santosh K
Edge, A. Vernon
Byrne, Aidan

Journal Title

Journal ISSN

Volume Title

Publisher

Institute of Electrical and Electronics Engineers (IEEE Inc)

Abstract

The lattice structure of both InN grains with submicron dimensions and a MBE-grown InN film have been studied with the radioisotope probe 111in/Cd and Perturbed Angular Correlation spectroscopy. The quadrupole interaction frequency of the probe in this material has been measured to be of the order of 28 MHz, consistent with results for ALN and GaN. Strong damping of the signal indicates that InN has a highly defective lattice with diverse defect structures, which are not cured by annealing in the accessible temperature range.

Description

Keywords

Keywords: Nuclear engineering; Radioactive materials; Indium nitride (InN); Lattice (CO); Lattice structures; Microelectronic materials; sub micron dimensions; Radioisotopes Annealing; In/Cd; InN; MBE growth; Nanowires; PAC; Radioisotope probe

Citation

URI

http://hdl.handle.net/1885/54368

Collections

ANU Research Publications

Source

2004 Conference on Optoelectronic and Microelectronic Materials and Devices Proceedings

Type

Conference paper

Book Title

Entity type

Access Statement

License Rights

DOI

10.1109/COMMAD.2004.1577481

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