Impurity free vacancy disordering of InGaAs quantum dots
| dc.contributor.author | Lever, P. | en_AU |
| dc.contributor.author | Jagadish, C. | en_AU |
| dc.contributor.author | Tan, Hark Hoe | en_AU |
| dc.date.accessioned | 2015-10-08T05:34:31Z | |
| dc.date.available | 2015-10-08T05:34:31Z | |
| dc.date.issued | 2004-12-15 | |
| dc.date.updated | 2015-12-12T08:17:04Z | |
| dc.description.abstract | The effect of thermal interdiffusion on In(Ga)As∕GaAsquantum dot structures is very significant, due to the large strain and high concentration of indium within the dots. The traditional high temperature annealing conditions used in impurity free vacancy disordering of quantum wells cannot be used for quantum dots, as the dots can be destroyed at these temperatures. However, additional shifts due to capping layers can be achieved at low annealing temperatures. Spin-on-glass, plasma enhanced chemical vapor depositedSiO₂, Si₃N₄, and electron-beam evaporated TiO₂ layers are used to both enhance and suppress the interdiffusion in single and stacked quantum dot structures. After annealing at only 750°C the different cappings enable a shift in band gap energy of 100meV to be obtained across the sample. | |
| dc.identifier.issn | 0021-8979 | en_AU |
| dc.identifier.uri | http://hdl.handle.net/1885/15825 | |
| dc.publisher | American Institute of Physics (AIP) | |
| dc.rights | http://www.sherpa.ac.uk/romeo/issn/0021-8979..."Publishers version/PDF may be used on author's personal website, institutional website or institutional repository" from SHERPA/RoMEO site (as at 8/10/15). Copyright 2004 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Applied Physics and may be found at https://doi.org/10.1063/1.1803948 | |
| dc.source | Journal of Applied Physics | |
| dc.subject | Keywords: Annealing; Concentration (process); Dielectric films; Diffusion in solids; High temperature effects; Impurities; Semiconductor quantum dots; Thermal expansion; Capping; Single layers; Thermal interdiffusion; Vaccancy; Semiconducting indium | |
| dc.title | Impurity free vacancy disordering of InGaAs quantum dots | |
| dc.type | Journal article | |
| local.bibliographicCitation.issue | 12 | en_AU |
| local.bibliographicCitation.lastpage | 7548 | en_AU |
| local.bibliographicCitation.startpage | 7544 | en_AU |
| local.contributor.affiliation | Lever McGowan, Penelope, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National University | en_AU |
| local.contributor.affiliation | Tan, Hoe Hark, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National University | en_AU |
| local.contributor.affiliation | Jagadish, Chennupati, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National University | en_AU |
| local.contributor.authoruid | u9915543 | en_AU |
| local.description.notes | Imported from ARIES | en_AU |
| local.description.refereed | Yes | |
| local.identifier.absfor | 090699 | en_AU |
| local.identifier.ariespublication | MigratedxPub15834 | en_AU |
| local.identifier.citationvolume | 96 | en_AU |
| local.identifier.doi | 10.1063/1.1803948 | en_AU |
| local.identifier.scopusID | 2-s2.0-11044224580 | |
| local.publisher.url | https://www.aip.org/ | en_AU |
| local.type.status | Published Version | en_AU |