Hierarchal silica nanowire growth via single step annealing

Date

2010

Authors

Shalav, Avi
Elliman, Robert

Journal Title

Journal ISSN

Volume Title

Publisher

Institute of Electrical and Electronics Engineers (IEEE Inc)

Abstract

Branched silica nanowires were grown on silicon substrates using a gold-catalyzed vapor-liquid-solid process in which the substrate was covered with a silicon capping layer. The reduced O2 partial pressure due to the capping layer is shown to result in regions of frustrated nanowire growth. By comparing electron micrographs from different regions, a growth mechanism for the branched nanowires is proposed.

Description

Keywords

Keywords: Active oxidation; Capping layer; Electron micrograph; Growth mechanisms; Nanowire growth; Pea-pod; Secondary growth; Silica nano wires; Silicon substrates; Single-step; Vapor-liquid-solid process; Nanoscience; Silica; Substrates; Nanowires Active oxidation; Nanowires; Pea-pod; Secondary growth; Silica (SiOx)

Citation

Source

Proceedings of International Conference on Nanoscience and Nanotechnology (ICONN 2010)

Type

Conference paper

Book Title

Entity type

Access Statement

License Rights

DOI

10.1109/ICONN.2010.6045252

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