Effect of crystallization on the reliability of unipolar resistive-switching in HfO 2 -based dielectrics
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Nawaz (Saleh), Muhammad
Venkatachalam, Dinesh
Elliman, Robert
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Elsevier
Abstract
The electroforming and unipolar resistive switching characteristics of as-deposited and annealed HfO2 and Hf0.6Si 0.4O2 films are reported. The reliability of HfO 2 devices is shown to be significantly degraded by annealing at 600 °C, during which the fi
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Current Applied Physics
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2037-12-31