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Improved resistive switching properties of solution processed ti O 2 thin films

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Date

2010

Authors

Biju, Kuyyadi P.
Liu, Xinjun
Bourim, El Mostafa
Kim, Insung
Jung, Seungjae
Park, Jubong
Hwang, Hyunsang

Journal Title

Journal ISSN

Volume Title

Publisher

Electrochemical Society Inc

Abstract

Resistive switching characteristics of low temperature sol-gel processed (250°C) Ti O2 thin films are investigated. The Pt/TiO 2/Pt device exhibits bipolar switching with a uniform high resistance state compared to the low resistance state. Reliability a

Description

Keywords

Keywords: Bottom electrodes; Compliance current; Cycling endurance; High-resistance state; Low temperatures; Low-resistance state; On/off ratio; Oxygen vacancy defects; Physical model; Reliability and stability; Resistive switching; Set operation; Switching propert

Citation

URI

http://hdl.handle.net/1885/65599

Collections

ANU Research Publications

Source

Electrochemical and Solid-State Letters

Type

Journal article

Book Title

Entity type

Access Statement

License Rights

DOI

10.1149/1.3494433

Restricted until

2037-12-31

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01_Biju_Improved_resistive_switching_2010.pdf (608.42 KB)

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