Guest Editorial Introduction to the Special Issue on Semiconductor Optoelectronic Materials and Devices

dc.contributor.authorDenBaars, Steven P.
dc.contributor.authorJoyce, Hannah Jane
dc.contributor.authorJagadish, Chennupati
dc.date.accessioned2026-01-22T05:31:00Z
dc.date.available2026-01-22T05:31:00Z
dc.date.issued2022
dc.date.updated2023-10-22T07:16:29Z
dc.description.abstractThis Special Issue of the IEEE Journal of Quantum Electronics on “Semiconductor Optoelectronic Materials and Devices” is dedicated to Professor P. Daniel Dapkus and the impact he has had in the development of metal organic chemical vapor deposition (MOCVD) for the growth and manufacture of advanced photonic devices. Professor Dapkus has focused his career activities on the research and development of photonic materials and devices including semiconductor lasers, LEDs, solar cells and detectors. While at Rockwell International, he led the group that demonstrated the potential and viability of MOCVD as the preferred technology for creating and manufacturing photonic devices. Professor Dapkus, along with his colleagues Professor Dupuis, Dr. H. Manasevit and Professor JJ Coleman are widely considered to be the leading pioneers in the development of the MOCVD technique. Dapkus’ group at Rockwell International was the first to report lasing in AlGaAs/GaAs double heterostructures at room temperature in 1977. This work along with their demonstration of multiple quantum well laser diodes in the 1978 has led to MOCVD becoming the dominant technique for the production of laser diodes and LEDs, along with other key photonic devices. As a Professor at USC, Dapkus’ lab investigated MOCVD fundamental growth mechanisms and selective area growth employing MOCVD. His lab made pioneering contributions to the technology of long-distance fiber optic lasers, ultra-low threshold datacom lasers, vertical cavity surface emitting lasers and photonic integrated circuits. In particular this work led to strained quaternary quantum wells became the preferred design in 1.3 and 1.55 micron laser diodes. The MOCVD technology and the quantum well material designs that were demonstrated with it now are dominant in the fabrication of devices for fiber optic systems, data communications, facial recognition, space solar cells, solid state lighting and cell phone amplifiers.
dc.format.mimetypeapplication/pdfen_AU
dc.identifier.issn0018-9197
dc.identifier.urihttps://hdl.handle.net/1885/733804839
dc.language.isoen_AUen_AU
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE Inc)
dc.rights© 2022 IEEE
dc.sourceIEEE Journal of Quantum Electronics
dc.titleGuest Editorial Introduction to the Special Issue on Semiconductor Optoelectronic Materials and Devices
dc.typeJournal article
local.bibliographicCitation.issue4
local.contributor.affiliationDenBaars, Steven P., University of California at Santa Barbara
local.contributor.affiliationJoyce, Hannah Jane, University of Cambridge
local.contributor.affiliationJagadish, Chennupati, College of Science, ANU
local.contributor.authoruidJagadish, Chennupati, u9212349
local.description.embargo2099-12-31
local.description.notesImported from ARIES
local.identifier.absfor510202 - Lasers and quantum electronics
local.identifier.ariespublicationa383154xPUB34130
local.identifier.citationvolume58
local.identifier.doi10.1109/JQE.2022.3177219
local.identifier.scopusID2-s2.0-85130774720
local.type.statusPublished Version
publicationvolume.volumeNumber58

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