High Vertical yield InP nanowire gorwth on Si(111) using a thin buffer layer

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dc.contributor.authorFonseka, Arunien_AU
dc.contributor.authorWong-Leung, Jenniferen_AU
dc.contributor.authorKang, Jung-Hyunen_AU
dc.contributor.authorParkinson, Patricken_AU
dc.contributor.authorJagadish, Chennupatien_AU
dc.contributor.authorTan, Hark Hoeen_AU
dc.date.accessioned2015-12-10T22:58:08Z
dc.date.issued2013
dc.date.updated2015-12-10T08:03:26Z
dc.description.abstractWe demonstrate the growth of InP nanowires on Si(111) using a thin InP buffer layer. The buffer layer is grown using a two-step procedure. The initial layer formation is ensured by using a very low growth temperature. An extremely high V/III ratio is nece
dc.identifier.issn0957-4484
dc.identifier.urihttp://hdl.handle.net/1885/60711
dc.publisherInstitute of Physics Publishing
dc.sourceNanotechnology
dc.titleHigh Vertical yield InP nanowire gorwth on Si(111) using a thin buffer layer
dc.typeJournal article
local.bibliographicCitation.issue46
local.bibliographicCitation.startpage9
local.contributor.affiliationFonseka, Aruni, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationTan, Hoe Hark, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationWong-Leung, Yin-Yin (Jennifer), College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationKang, Jung-Hyun, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationParkinson, Patrick, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationJagadish, Chennupati, College of Physical and Mathematical Sciences, ANU
local.contributor.authoruidFonseka, Aruni, u4957496
local.contributor.authoruidTan, Hoe Hark, u9302338
local.contributor.authoruidWong-Leung, Yin-Yin (Jennifer), u9607716
local.contributor.authoruidKang, Jung-Hyun, u4335853
local.contributor.authoruidParkinson, Patrick, u4869537
local.contributor.authoruidJagadish, Chennupati, u9212349
local.description.embargo2037-12-31
local.description.notesImported from ARIES
local.identifier.absfor091203 - Compound Semiconductors
local.identifier.absfor100708 - Nanomaterials
local.identifier.absfor020406 - Surfaces and Structural Properties of Condensed Matter
local.identifier.absseo970102 - Expanding Knowledge in the Physical Sciences
local.identifier.absseo970109 - Expanding Knowledge in Engineering
local.identifier.ariespublicationU3594520xPUB558
local.identifier.citationvolume24
local.identifier.doi10.1088/0957-4484/24/46/465602
local.identifier.scopusID2-s2.0-84887100433
local.identifier.thomsonID000326714100016
local.type.statusPublished Version

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