High Vertical yield InP nanowire gorwth on Si(111) using a thin buffer layer
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Fonseka, Aruni
Wong-Leung, Jennifer
Kang, Jung-Hyun
Parkinson, Patrick
Jagadish, Chennupati
Tan, Hark Hoe
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Institute of Physics Publishing
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We demonstrate the growth of InP nanowires on Si(111) using a thin InP buffer layer. The buffer layer is grown using a two-step procedure. The initial layer formation is ensured by using a very low growth temperature. An extremely high V/III ratio is nece
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Nanotechnology
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2037-12-31
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