Defects in Ge and Si caused by 1 MeV Si+ implantation
Date
2008
Authors
Hickey, D P
Bryan, Z L
Jones, K S
Elliman, Robert
Haller, E E
Journal Title
Journal ISSN
Volume Title
Publisher
American Institute of Physics (AIP)
Abstract
Cross-sectional transmission electron microscopy was used to study defect formation and evolution in the (001) Ge and Si wafers implanted with 1 MeV Si+ and 40 keV Si+ at a dose of 1× 1014 cm-2. As expected, upon annealing, the {311} extended defects for
Description
Keywords
Keywords: Defect formation; Nonamorphizing implants; Annealing; Defects; Ion implantation; Silicon wafers; Transmission electron microscopy; Germanium
Citation
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Source
Journal of Vacuum Science and Technology B
Type
Journal article