Defects in Ge and Si caused by 1 MeV Si+ implantation

Date

2008

Authors

Hickey, D P
Bryan, Z L
Jones, K S
Elliman, Robert
Haller, E E

Journal Title

Journal ISSN

Volume Title

Publisher

American Institute of Physics (AIP)

Abstract

Cross-sectional transmission electron microscopy was used to study defect formation and evolution in the (001) Ge and Si wafers implanted with 1 MeV Si+ and 40 keV Si+ at a dose of 1× 1014 cm-2. As expected, upon annealing, the {311} extended defects for

Description

Keywords

Keywords: Defect formation; Nonamorphizing implants; Annealing; Defects; Ion implantation; Silicon wafers; Transmission electron microscopy; Germanium

Citation

Source

Journal of Vacuum Science and Technology B

Type

Journal article

Book Title

Entity type

Access Statement

License Rights

DOI

10.1116/1.2834557

Restricted until