Formation of Precipitates in Heavily Boron Doped 4H-SiC

Date

2006

Authors

Linnarsson, M K
Janson, M S
Nordell, N
Wong-Leung, Jennifer
Schoner, A

Journal Title

Journal ISSN

Volume Title

Publisher

Elsevier

Abstract

Secondary ion mass spectrometry (SIMS) and transmission electron microscopy (TEM) are utilized to study precipitation and the solubility of B in 4H-SiC epitaxial layers super saturated with B. Heat treatments are performed in Ar atmosphere in an rf-heated furnace at temperatures between 1700 and 2000 °C. SIMS ion images, and TEM micrographs reveal the formation of two types of precipitates where the larger, more thermally stable one is suggested to be B4C. The boron solubility is determined from SIMS depth profiles and is shown to follow the Arrhenius expression: 7.1 × 1022 exp(-1.4 eV/kBT) cm-3 over the studied temperature range.

Description

Keywords

Keywords: Boron; Doping (additives); Heat treatment; Precipitation (chemical); Secondary ion mass spectrometry; Solubility; Transmission electron microscopy; Arrhenius expression; Micrographs; Precipitates; Solubility limit; Silicon carbide B; Precipitates; SiC; SIMS; Solubility limit; TEM

Citation

Source

Applied Surface Science

Type

Journal article

Book Title

Entity type

Access Statement

License Rights

DOI

10.1016/j.apsusc.2005.12.024

Restricted until

2037-12-31