Predicting Open-Circuit Voltages in Atomically-Thin Monolayer Transition Metal Dichalcogenides-Based Solar Cells

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Tebyetekerwa, Mike
Macdonald, Daniel
Nguyen, Hieu

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IEEE

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We present an approach to quantify upper limits of open circuit voltages (Voc) that can possibly be achieved from monolayer transition metal dichalcogenides (TMDs) WS2, MoS2, WSe2, and MoSe2-based solar cells, and compare them with stateof-the-art perovskite materials. Spectrally-resolved microphotoluminescence (μ-PL) and absorption measurements were utilized in the generalised Planck law of emissions to derive quasi-Fermi level splitting values (∆μ) of these monolayers under illumination. The value of ∆μ of a certain material represents the highest possible open-circuit voltage of a solar cell fabricated from that material. From our analysis, values close to ~1.4, ~1.12, ~1.06 and ~0.93 V could be potentially achieved from WS2, MoS2, WSe2, and MoSe2 monolayers-based solar cells under 1-sun illumination. The results reveal the potential of atomically-thin TMDs for high-voltage, ultra-light, flexible, and transparent photovoltaics.

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Restricted until

2099-12-31