Predicting Open-Circuit Voltages in Atomically-Thin Monolayer Transition Metal Dichalcogenides-Based Solar Cells
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Tebyetekerwa, Mike
Macdonald, Daniel
Nguyen, Hieu
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IEEE
Abstract
We present an approach to quantify upper limits of
open circuit voltages (Voc) that can possibly be achieved from
monolayer transition metal dichalcogenides (TMDs) WS2, MoS2,
WSe2, and MoSe2-based solar cells, and compare them with stateof-the-art perovskite materials. Spectrally-resolved microphotoluminescence (μ-PL) and absorption measurements were
utilized in the generalised Planck law of emissions to derive quasi-Fermi level splitting values (∆μ) of these monolayers under
illumination. The value of ∆μ of a certain material represents the
highest possible open-circuit voltage of a solar cell fabricated
from that material. From our analysis, values close to ~1.4, ~1.12,
~1.06 and ~0.93 V could be potentially achieved from WS2, MoS2,
WSe2, and MoSe2 monolayers-based solar cells under 1-sun illumination. The results reveal the potential of atomically-thin
TMDs for high-voltage, ultra-light, flexible, and transparent photovoltaics.
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Restricted until
2099-12-31