Tradeoffs between impurity gettering, bulk degradation, and surface passivation of boron-rich layers on silicon solar cells

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dc.contributor.authorPhang, Sieu Pheng
dc.contributor.authorLiang, Wensheng
dc.contributor.authorWolpensinger, Bettina
dc.contributor.authorKessler, Michael Andreas
dc.contributor.authorMacDonald, Daniel
dc.date.accessioned2015-12-07T22:39:11Z
dc.date.issued2013
dc.date.updated2016-02-24T11:34:20Z
dc.description.abstractThe suitability of using a boron-rich layer (BRL) formed during boron diffusion as a gettering layer for n-type silicon solar cells is investigated. We have studied the gettering effectiveness, generation of dislocations and associated bulk lifetime degradation, and the impact of the BRL on the saturation current density, for different thickness of BRL and postoxidation conditions. Our results show that a BRL deposited using BBr 3-based furnaces is very effective at gettering interstitial Fe, removing more than 99.9% of Fe, but that the gettered Fe is released back into the wafer when the BRL is oxidized thermally. While we have detected no significant bulk degradation due to dislocations for the diffusion conditions used, there remains a tradeoff between the gettering effect and the recombination in the boron-doped region. Although the BRL can be oxidized chemically at low temperature using boiling nitric acid without losing the gettering effect, the lowest saturation current density is obtained by means of thermal oxidation, thanks partly to a lower boron surface concentration in thermally oxidized samples.
dc.identifier.issn2156-3381
dc.identifier.urihttp://hdl.handle.net/1885/23753
dc.publisherIEEE Electron Devices Society
dc.sourceIEEE Journal of Photovoltaics
dc.subjectKeywords: Boron diffusions; Boron-doped; Bulk degradation; Bulk lifetime; Different thickness; Gettering; Gettering effect; Low temperatures; Post-oxidation; Saturation current; Saturation current densities; Silicon photovoltaic; Surface concentration; Surface pass Boron diffusion; emitter saturation current; impurity gettering; silicon photovoltaic cells
dc.titleTradeoffs between impurity gettering, bulk degradation, and surface passivation of boron-rich layers on silicon solar cells
dc.typeJournal article
local.bibliographicCitation.issue1
local.bibliographicCitation.lastpage266
local.bibliographicCitation.startpage261
local.contributor.affiliationPhang, Sieu Pheng, College of Engineering and Computer Science, ANU
local.contributor.affiliationLiang, Wensheng, College of Engineering and Computer Science, ANU
local.contributor.affiliationWolpensinger, Bettina, Institute of Solar Energy Research
local.contributor.affiliationKessler, Michael Andreas, Institute of Solar Energy Research
local.contributor.affiliationMacDonald, Daniel, College of Engineering and Computer Science, ANU
local.contributor.authoremailu4188633@anu.edu.au
local.contributor.authoruidPhang, Sieu Pheng, u4188633
local.contributor.authoruidLiang, Wensheng, u4804098
local.contributor.authoruidMacDonald, Daniel, u9718154
local.description.embargo2037-12-31
local.description.notesImported from ARIES
local.identifier.absfor090605 - Photodetectors, Optical Sensors and Solar Cells
local.identifier.absseo850504 - Solar-Photovoltaic Energy
local.identifier.ariespublicationu5114172xPUB28
local.identifier.citationvolume3
local.identifier.doi10.1109/JPHOTOV.2012.2226332
local.identifier.scopusID2-s2.0-84871771541
local.identifier.thomsonID000318434000040
local.identifier.uidSubmittedByu5114172
local.type.statusPublished Version

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