Defect generation at SiO₂/Si interfaces by low pressure chemical vapor deposition of silicon nitride

Abstract

Low pressurechemical vapor deposition of Si₃N₄ on oxidized Si (111) surfaces causes a change in the properties of the dominant interface defect, the Pb center, observed by electron paramagnetic resonance. The change in the signature of the Pb center is consistent with the formation of an oxynitride layer at the interface, which could be formed during the initial stages of nitride layer deposition. Photoconductivity decay measurements show a concomitant increase in the minority carrier recombination rate at the Si surface. The modified Si surface shows a worse thermal stability than the as-oxidized Si surface. Show more