Resistive switching mechanism of a Pr0.7Ca0.3MnO3-based memory device and assessment of its suitability for nano-scale applications
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Liu, Xinjun
Kim, Insung
Siddik, Manzar
Sadaf, Sharif Md.
Biju, Kuyyadi P.
Park, Sangsu
Hwang, Hyunsang
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Hanguk Mulli Hakhoe
Abstract
In this work, various nano-scale Pr0.7Ca0.3MnO3(PCMO)-based memory devices with electrode diameters of 250 nm were fabricated, and the effect of the metal electrode/PCMO interface on resistive switching (RS) for PCMO-based resistive random access memories, is systematically investigated. The switching behavior could be improved not only by using a reactive metal (W and Al) but also by inserting a thin oxide tunnel barrier layer (yttria-stabilized zirconia, i.e., YSZ) or a dielectric Al2O3 layer between the electrode and the PCMO film.
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Journal of the Korean Physical Society
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2037-12-31
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