Room temperature writing of electrically conductive and insulating zones in silicon by nanoindentation
Date
2011-02-02
Authors
Ruffell, S.
Sears, K.
Bradby, J. E.
Williams, J. S.
Journal Title
Journal ISSN
Volume Title
Publisher
American Institute of Physics (AIP)
Abstract
Conventional silicon devices are fabricated in the diamond cubic phase of silicon, so-called Si-I. Other phases of silicon such as Si-XII and Si-III can be formed under pressure applied by nanoindentation and these phases are metastable at room temperature and pressure. We demonstrate in this letter that such phases exhibit different electrical properties to normal (diamond cubic) silicon and exploit this to perform maskless, room temperature, electrical patterning of silicon by writing both conductive and insulating zones directly into silicon substrates by nanoindentation. Such processing opens up a number of potentially new applications without the need for high temperature processing steps.
Description
Keywords
Keywords: Diamond cubic phase; Electrical property; Electrically conductive; High-temperature processing; Mask less; New applications; Room temperature; Silicon devices; Silicon substrates; Electric properties; High temperature applications; Metastable phases; Nano
Citation
Collections
Source
Applied Physics Letters
Type
Journal article
Book Title
Entity type
Access Statement
License Rights
Restricted until
Downloads
File
Description
Published Version