Temperature dependence of the band-band absorption coefficient in crystalline silicon from photoluminescence

dc.contributor.authorNguyen, Hieu T.
dc.contributor.authorRougieux, Fiacre E.
dc.contributor.authorMitchell, Bernhard
dc.contributor.authorMacdonald, Daniel
dc.date.accessioned2015-09-14T01:48:21Z
dc.date.available2015-09-14T01:48:21Z
dc.date.issued2014-01-27
dc.description.abstractThe band-band absorption coefficient in crystalline silicon has been determined using spectral photoluminescence measurements across the wavelength range of 990–1300 nm, and a parameterization of the temperature dependence has been established to allow interpolation of accurate values of the absorption coefficient for any temperature between 170 and 363 K. Band-band absorption coefficient measurements across a temperature range of 78–363 K are found to match well with previous results from MacFarlane et al. [Phys. Rev. 111, 1245 (1958)], and are extended to significantly longer wavelengths. In addition, we report the band-band absorption coefficient across the temperature range from 270–350 K with 10 K intervals, a range in which most practical silicon based devices operate, and for which there are only sparse data available at present. Moreover, the absorption coefficient is shown to vary by up to 50% for every 10 K increment around room temperature. Furthermore, the likely origins of the differences among the absorption coefficient of several commonly referenced works by Green [Sol. Energy Mater. Sol. Cells 92, 1305 (2008)], Daub and Würfel [Phys. Rev. Lett. 74, 1020 (1995)], and MacFarlane et al. [Phys. Rev. 111, 1245 (1958)] are discussed.en_AU
dc.identifier.issn0021-8979en_AU
dc.identifier.urihttp://hdl.handle.net/1885/15369
dc.publisherAmerican Institute of Physicsen_AU
dc.rights© 2014 AIP Publishing LLC. http://www.sherpa.ac.uk/romeo/issn/0021-8979/..."Publishers version/PDF may be used on author's personal website, institutional website or institutional repository" from SHERPA/RoMEO site (as at 14/09/15).en_AU
dc.sourceJournal of Applied Physicsen_AU
dc.titleTemperature dependence of the band-band absorption coefficient in crystalline silicon from photoluminescenceen_AU
dc.typeJournal articleen_AU
dcterms.dateAccepted2014-01-09
local.bibliographicCitation.issue4en_AU
local.bibliographicCitation.startpage043710en_AU
local.contributor.affiliationNguyen, H. T., Research School of Engineering, The Australian National Universityen_AU
local.contributor.affiliationRougieux, F. E., Research School of Engineering, The Australian National Universityen_AU
local.contributor.affiliationMacdonald, D., Research School of Engineering, The Australian National Universityen_AU
local.contributor.authoremailhieu.nguyen@anu.edu.auen_AU
local.contributor.authoruidu5247402en_AU
local.identifier.citationvolume115en_AU
local.identifier.doi10.1063/1.4862912en_AU
local.identifier.uidSubmittedByu1005913en_AU
local.type.statusPublished Versionen_AU

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