Ion-implanted In0.53Ga0.47As for ultrafast optoelectronic applications

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dc.contributor.authorCarmody, Cen_AU
dc.contributor.authorJagadish, Chennupatien_AU
dc.contributor.authorGaarder, A.en_AU
dc.contributor.authorMarcinkevicius, Sen_AU
dc.contributor.authorTan, Hark Hoeen_AU
dc.date.accessioned2015-12-13T22:37:39Z
dc.date.issued2003
dc.date.updated2015-12-11T09:37:36Z
dc.description.abstractIon-implanted In0.53Ga0.47As for ultrafast optoelectronic applications was studied. The shortest carrier lifetimes in InGaAs were achieved at annealing temperatures much lower than those that were associated with Fe activation. A jump in sheet resistance
dc.identifier.issn0003-6951
dc.identifier.urihttp://hdl.handle.net/1885/77191
dc.publisherAmerican Institute of Physics (AIP)
dc.sourceApplied Physics Letters
dc.subjectKeywords: Annealing; Computer simulation; Electric conductivity; Hall effect; Optoelectronic devices; Carrier lifetimes; Ion implantation
dc.titleIon-implanted In0.53Ga0.47As for ultrafast optoelectronic applications
dc.typeJournal article
local.bibliographicCitation.issue22
local.bibliographicCitation.lastpage3915
local.bibliographicCitation.startpage3913
local.contributor.affiliationCarmody, C, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationTan, Hoe Hark, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationJagadish, Chennupati, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationGaarder, A., Royal Institute of Technology
local.contributor.affiliationMarcinkevicius, S, Royal Institute of Technology
local.contributor.authoruidCarmody, C, u9905516
local.contributor.authoruidTan, Hoe Hark, u9302338
local.contributor.authoruidJagadish, Chennupati, u9212349
local.description.embargo2037-12-31
local.description.notesImported from ARIES
local.description.refereedYes
local.identifier.absfor091299 - Materials Engineering not elsewhere classified
local.identifier.absfor020501 - Classical and Physical Optics
local.identifier.ariespublicationMigratedxPub6084
local.identifier.citationvolume82
local.identifier.doi10.1063/1.1579565
local.identifier.scopusID2-s2.0-0037631798
local.type.statusPublished Version

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