Ion-implanted In0.53Ga0.47As for ultrafast optoelectronic applications
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Carmody, C
Jagadish, Chennupati
Gaarder, A.
Marcinkevicius, S
Tan, Hark Hoe
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American Institute of Physics (AIP)
Abstract
Ion-implanted In0.53Ga0.47As for ultrafast optoelectronic applications was studied. The shortest carrier lifetimes in InGaAs were achieved at annealing temperatures much lower than those that were associated with Fe activation. A jump in sheet resistance
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Applied Physics Letters
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2037-12-31
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