High index contrast polysiloxane waveguides fabricated by dry etching

Abstract

The authors demonstrate the production of low loss enhanced index contrast waveguides by reactive ion etching of IPG™ polysiloxane thin films. The use of a silica mask and CHF₃∕O₂etch gas led to large etch selectivity between the silica and IPG™ of >20 and etch rates of >100nm∕min. This work indicates that compact optical circuits could be successfully fabricated for telecommunication applications using polysiloxane films. Show more