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Monolithically integrated multi-section semiconductor laser by selective area quantum well intermixing

Date

Authors

Sajewicz, Pawel

Fu, Lan

Vora, Kaushal

Jagadish, Chennupati

Tan, Hark Hoe

Publisher

Institute of Electrical and Electronics Engineers (IEEE Inc)

Abstract

In this work, we report the use of dielectric capping layer of TiO 2 to selectively suppress thermal interdiffusion of an InGaAs/GaAs quantum well laser structure. Large differential wavelength shift of ∼ 25nm has been obtained across the same wafer bet

Keywords

Keywords: Dielectric capping layers; Monolithic integration; Monolithically integrated; Passive waveguides; Quantum well intermixing; Selective areas; Thermal interdiffusion; Wavelength shift; Microelectronics; Quantum well lasers; Monolithic integrated circuits

URI

http://hdl.handle.net/1885/59994

Collections

ANU Research Publications

Source

COMMAD 2012 Proceedings

Type

Conference paper

DOI

10.1109/COMMAD.2012.6472398

Restricted until

2037-12-31

Downloads

File

Description

01_Sajewicz_Monolithically_integrated_2012.pdf (243.4 KB)