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Improved quantitative description of Auger recombination in crystalline silicon

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Date

Authors

Richter, A
Glunz, Stefan
Werner, Florian
Schmidt, Jan
Cuevas, Andres

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Publisher

American Physical Society

Abstract

An accurate quantitative description of the Auger recombination rate in silicon as a function of the dopant density and the carrier injection level is important to understand the physics of this fundamental mechanism and to predict the physical limits to

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Source

Physical Review B: Condensed Matter and Materials

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Access Statement

Open Access

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Restricted until