Reassessment of the recombination parameters of chromium in n- and p-type crystalline silicon and chromium-boron pairs in p-type crystalline silicon

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dc.contributor.authorSun, Chang
dc.contributor.authorRougieux, Fiacre E.
dc.contributor.authorMacdonald, Daniel
dc.date.accessioned2015-10-23T00:47:47Z
dc.date.available2015-10-23T00:47:47Z
dc.date.issued2014-06-03
dc.date.updated2015-12-11T07:33:42Z
dc.description.abstractInjection-dependent lifetime spectroscopy of both n- and p-type, Cr-doped silicon wafers with different doping levels is used to determine the defect parameters of Cri and CrB pairs, by simultaneously fitting the measured lifetimes with the Shockley-Read-Hall model. A combined analysis of the two defects with the lifetime data measured on both n- and p-type samples enables a significant tightening of the uncertainty ranges of the parameters. The capture cross section ratios k = σn/σp of Cri and CrB are determined as 3.2 (−0.6, +0) and 5.8 (−3.4, +0.6), respectively. Courtesy of a direct experimental comparison of the recombination activity of chromium in n- and p-type silicon, and as also suggested by modelling results, we conclude that chromium has a greater negative impact on carrier lifetimes in p-type silicon than n-type silicon with similar doping levels.
dc.description.sponsorshipThis work has been supported through the Australian Renewable Energy Agency (ARENA) fellowships program, Project 1-GER010, and the Australian Centre for Advanced Photovoltaics; and also by the Australian Research Council (ARC) Future Fellowships program.en_AU
dc.identifier.issn0021-8979en_AU
dc.identifier.urihttp://hdl.handle.net/1885/16045
dc.publisherAmerican Institute of Physics (AIP)
dc.rightshttp://www.sherpa.ac.uk/romeo/issn/0021-8979..."Publishers version/PDF may be used on author's personal website, institutional website or institutional repository" from SHERPA/RoMEO site (as at 23/10/15). Copyright 2014 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Applied Physics and may be found at https://doi.org/10.1063/1.4881497
dc.sourceJournal of Applied Physics
dc.titleReassessment of the recombination parameters of chromium in n- and p-type crystalline silicon and chromium-boron pairs in p-type crystalline silicon
dc.typeJournal article
local.bibliographicCitation.issue21en_AU
local.bibliographicCitation.lastpage9
local.bibliographicCitation.startpage214907en_AU
local.contributor.affiliationSun, Chang, College of Engineering and Computer Science, College of Engineering and Computer Science, Research School of Engineering, The Australian National Universityen_AU
local.contributor.affiliationRougieux, Fiacre, College of Engineering and Computer Science, College of Engineering and Computer Science, Research School of Engineering, The Australian National Universityen_AU
local.contributor.affiliationMacDonald, Daniel, College of Engineering and Computer Science, College of Engineering and Computer Science, Research School of Engineering, The Australian National Universityen_AU
local.contributor.authoremailchang.sun@anu.edu.auen_AU
local.contributor.authoruidU5408594en_AU
local.description.notesImported from ARIESen_AU
local.identifier.absfor090605en_AU
local.identifier.ariespublicationU3488905xPUB2558en_AU
local.identifier.citationvolume115en_AU
local.identifier.doi10.1063/1.4881497en_AU
local.identifier.scopusID2-s2.0-84902603224
local.identifier.thomsonID000337161600075
local.identifier.uidSubmittedByu3488905en_AU
local.publisher.urlhttps://www.aip.org/en_AU
local.type.statusPublished Versionen_AU

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