Enhanced sheath heating in capacitively coupled discharges due to non-sinusoidal voltage waveforms
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Lafleur, T.
Boswell, R. W.
Booth, J. P.
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American Institute of Physics (AIP)
Abstract
Through the use of particle-in-cell simulations, we demonstrate that the power deposition in
capacitively coupled discharges (in argon) can be increased by replacing sinusoidal waveforms
with Gaussian-shaped voltage pulses (with a repetition frequency of 13.56 MHz). By changing the
Gaussian pulse width, electron heating can be directly controlled, allowing for an increased plasma
density and ion flux for the same gas pressure and geometrical operating conditions. Analysis
of the power deposition profiles and electron distribution functions shows that enhanced
electron-sheath heating is responsible for the increased power absorption.
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Applied Physics Letters
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