Structural properties and resistive switching behaviour in MgxZn1-xO alloy films grown by pulsed laser deposition

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dc.contributor.authorCao, Xun
dc.contributor.authorLi, Xiaomin
dc.contributor.authorGao, Xiangdong
dc.contributor.authorLiu, Xinjun
dc.contributor.authorYang, Chang
dc.contributor.authorChen, Lidong
dc.date.accessioned2015-12-10T23:18:09Z
dc.date.issued2011
dc.date.updated2016-02-24T09:57:10Z
dc.description.abstractMgxZn1-xO alloy films with Mg concentration ranging from 0 to 0.5 were fabricated by a pulsed laser deposition method. The effect of Mg content on the microstructure and resistive switching behaviour was investigated. It was found that the film structure
dc.identifier.issn0022-3727
dc.identifier.urihttp://hdl.handle.net/1885/65496
dc.publisherInstitute of Physics Publishing
dc.sourceJournal of Physics D: Applied Physics
dc.subjectKeywords: Alloy film; Band gaps; Crystalline grains; Film structure; High-resistance state; Low-resistance state; Mg concentrations; Mg content; Model-based; Pulsed laser; Resistive switching; Thermal treatment; Metallic films; Pulsed laser deposition; Rapid therma
dc.titleStructural properties and resistive switching behaviour in MgxZn1-xO alloy films grown by pulsed laser deposition
dc.typeJournal article
local.bibliographicCitation.issue1
local.contributor.affiliationCao, Xun, Chinese Academy of Sciences, Shanghai Institute of Ceramics
local.contributor.affiliationLi, Xiaomin, Chinese Academy of Sciences, Shanghai Institute of Ceramics
local.contributor.affiliationGao, Xiangdong, Chinese Academy of Sciences, Shanghai Institute of Ceramics
local.contributor.affiliationLiu, Xinjun, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationYang, Chang, Chinese Academy of Sciences, Shanghai Institute of Ceramics
local.contributor.affiliationChen, Lidong, Chinese Academy of Sciences, Shanghai Institute of Ceramics
local.contributor.authoruidLiu, Xinjun, u5361480
local.description.embargo2037-12-31
local.description.notesImported from ARIES
local.identifier.absfor100705 - Nanoelectronics
local.identifier.absfor091203 - Compound Semiconductors
local.identifier.absseo970110 - Expanding Knowledge in Technology
local.identifier.ariespublicationU3488905xPUB1114
local.identifier.citationvolume44
local.identifier.doi10.1088/0022-3727/44/1/015302
local.identifier.scopusID2-s2.0-78650648383
local.type.statusPublished Version

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