Observation of enhanced defect emission and excitonic quenching from spherically indented ZnO

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dc.contributor.authorColeman, Victoria A
dc.contributor.authorBradby, J. E.
dc.contributor.authorJagadish, C.
dc.contributor.authorPhillips, M. R.
dc.date.accessioned2015-10-06T04:04:57Z
dc.date.available2015-10-06T04:04:57Z
dc.date.issued2006-08-23
dc.date.updated2015-12-12T07:52:01Z
dc.description.abstractThe influence of spherical nanoindentation on the band edge and deep level emission of single crystal c-axis ZnO has been studied by cathodoluminescence(CL) spectroscopy and monochromatic imaging. Excitonic emission is quenched at the indent site and defect emission in the range of 450–720nm is enhanced.
dc.description.sponsorshipThe authors wish to acknowledge the Australian Research Council for its financial support.en_AU
dc.identifier.issn0003-6951en_AU
dc.identifier.urihttp://hdl.handle.net/1885/15779
dc.publisherAmerican Institute of Physics
dc.rightshttp://www.sherpa.ac.uk/romeo/issn/0003-6951..."Publishers version/PDF may be used on author's personal website, institutional website or institutional repository" from SHERPA/RoMEO site (as at 6/10/15). Copyright 2006 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters and may be found at https://doi.org/10.1063/1.2338552
dc.sourceApplied Physics Letters
dc.subjectKeywords: Cathodoluminescence; Crystal defects; Crystallography; Excitons; Image analysis; Indentation; Quenching; Spectrum analysis; Zinc oxide; Cathodoluminescence (CL) spectroscopy; Emission band; Excitonic quenching; Monochromatic imaging; Single crystals
dc.titleObservation of enhanced defect emission and excitonic quenching from spherically indented ZnO
dc.typeJournal article
local.bibliographicCitation.issue8en_AU
local.bibliographicCitation.startpage082102en_AU
local.contributor.affiliationColeman, Victoria A, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National Universityen_AU
local.contributor.affiliationBradby, Jodie, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National Universityen_AU
local.contributor.affiliationJagadish, Chennupati, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National Universityen_AU
local.contributor.affiliationPhillips, Matthew R, University of Technology Sydney, Australiaen_AU
local.contributor.authoruidu4014712en_AU
local.description.notesImported from ARIESen_AU
local.description.refereedYes
local.identifier.absfor020406en_AU
local.identifier.absfor020501en_AU
local.identifier.ariespublicationMigratedxPub13342en_AU
local.identifier.citationvolume89en_AU
local.identifier.doi10.1063/1.2338552en_AU
local.identifier.scopusID2-s2.0-33748121588
local.publisher.urlhttps://www.aip.org/en_AU
local.type.statusPublished Versionen_AU

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