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Room temperature GaAsSb array photodetectors

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Date

2018-08-22

Authors

Li, Ziyuan
Trendafilov, Simon
Allen, Monica
Allen, Jeffrey
Alabadla, Ahmed
Gao, Qian
yuan, xiaoming
Yang, Inseok
Caroff, Philippe
Tan, Hark Hoe

Journal Title

Journal ISSN

Volume Title

Publisher

Conference Organising Committee

Abstract

GaAsSb nanowire arrays were grown by gold-seeded metalorganic vapor phase epitaxy (MOVPE) and fabricated into photodetector devices. The array photodetectors operate at room temperature with tunable resonance peaks varying with the array geometry. These devices are promising for multispectral photodetector applications.

Description

Keywords

GaAsSb, III-V semiconductor, nanowire, VLS, photodetector

Citation

URI

http://hdl.handle.net/1885/195973

Collections

ANU Research Publications

Source

RAPID 2018 - 2018 IEEE Research and Applications of Photonics In Defense Conference

Type

Conference paper

Book Title

Entity type

Access Statement

License Rights

DOI

10.1109/RAPID.2018.8508949

Restricted until

2037-12-31

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Description
01_Li_Room_temperature_GaAsSb_array_2018.pdf (463.98 KB)

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