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S and Si ion implantation in GaSb grown on GaAs

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Date

1999

Authors

Rao, Mulpuri V
Berry, Andrew John
Do, Thang Q
Ridgway, Mark C
Chi, P H

Journal Title

Journal ISSN

Volume Title

Publisher

American Institute of Physics (AIP)

Abstract

Single and multiple energy S and Si ion implantations were performed at room temperature (RT) and 200°C into GaSb epitaxial layers grown on semi-insulating GaAs substrates. The implanted material was annealed with a Si3N4 cap at 400-600°C for 5 min. Sec

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Citation

URI

http://hdl.handle.net/1885/93399

Collections

ANU Research Publications

Source

Journal of Applied Physics

Type

Journal article

Book Title

Entity type

Access Statement

License Rights

DOI

Restricted until

2037-12-31

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