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Solid-state microwave annealing of ion-implanted 4H-SiC

Date

Authors

Sundaresan, Siddarth G

Tian, Yong-lai

Ridgway, Mark C

Mahadik, Nadeemullah A

Qadri, S B

Rao, Mulpuri V

Publisher

Elsevier

Abstract

Solid-state microwave annealing was performed at temperatures up to 2120 °C for 30 s on ion-implanted 4H-SiC in N2 ambient. The surface roughness in the samples annealed without a surface cap at 1950 °C is 2.65 nm for 10 μm × 10 μm atomic force micro

Keywords

Keywords: Furnace annealing; Lattice damage; Microwave annealing; Substitutional lattice; Annealing; Atomic force microscopy; Microwave devices; Sheet resistance; Silicon carbide; Surface roughness; Ion implantation Ion-implantation; Microwave annealing; Sheet resistance; Silicon carbide; Surface roughness

URI

http://hdl.handle.net/1885/28957

Collections

ANU Research Publications

Source

Nuclear Instruments and Methods in Physics Research: Section B

Type

Journal article

DOI

10.1016/j.nimb.2007.04.018

Restricted until

2037-12-31

Downloads

File

Description

01_Sundaresan_Solid-state_microwave_2007.pdf (236.52 KB)

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