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InGaAsN Quantum Dots for Long Wavelength Lasers

Date

Authors

Gao, Qiang

Buda, Manuela

Jagadish, Chennupati

Tan, Hark Hoe

Publisher

Institute of Electrical and Electronics Engineers (IEEE Inc)

Abstract

InGaAsN quantum dots (QDs) were grown on (001) GaAs substrates by metalorganic chemical vapor deposition. Edge-emitting lasers based on this QD structure were fabricated and characterized. It was found that InGaAsN is easier to form QDs than InGaAs with the same nominal In content. InGaAsN laser devices lased at much shorter wavelength compared to the photoluminescence emission.

Keywords

Keywords: Chemical vapor deposition; Gallium alloys; Lasers; Metallizing; Nanoscience; Nanotechnology; Optical design; Optical waveguides; Pulsed laser deposition; Quantum electronics; Chemical vapors; Edge-emitting laser (EEL); GaAs(001) substrates; InGaAsN; Inter InGaAsN; Laser; MOCVD; Quantum dots

URI

http://hdl.handle.net/1885/26971

Collections

ANU Research Publications

Source

Proceedings of the 2006 International Conference on Nanoscience and Nanotechnology

Type

Conference paper

DOI

10.1109/ICONN.2006.340658

Restricted until

2037-12-31

Downloads

File

Description

01_Gao_InGaAsN_Quantum_Dots_for_Long_2006.pdf (161.18 KB)