Gold-free ternary III-V antimonide nanowire arrays on silicon: Twin-free down to the first bilayer
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Conesa-Boj, Sonia
Kriegner, Dominik
Han, Xiang-Lei
Plissard, Sebastien
Wallart, Xavier
Stangl, J
Fontcuberta i Morral, Anna
Caroff, Philippe
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American Chemical Society
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With the continued maturation of III-V nanowire research, expectations of material quality should be concomitantly raised. Ideally, III-V nanowires integrated on silicon should be entirely free of extended planar defects such as twins, stacking faults, or
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Nano Letters
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2037-12-31
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