Identification and modulation of electronic band structures of single-phase B-(AlxGa1-x)2O3 alloys grown by laser molecular beam epitaxy

Abstract

Understanding the band structure evolution of (AlxGa1x)2O3 alloys is of fundamental importance for developing Ga2O3-based power electronic devices and vacuum ultraviolet super-radiation hard detectors. Here, we report on the bandgap engineering of b-(AlxGa1x)2O3 thin films and the identification of compositionally dependent electronic band structures by a combination of absorption spectra analyses and density functional theory calculations. Single-monoclinic b-phase (AlxGa1x)2O3 (0 x 0.54) films with a preferred (201) orientation were grown by laser molecular beam epitaxy with tunable bandgap ranging from 4.5 to 5.5 eV. The excellent fitting of absorption spectra by the relation of (ah) 1/2 / (h-E) unambiguously identifies that b-(AlxGa1x)2O3 alloys are indirect bandgap semiconductors. Theoretical calculations predict that the indirect nature of b-(AlxGa1x)2O3 becomes more pronounced with increased Al composition due to the increased eigenvalue energy gap between M and U points in the valence band. The experimentally determined indirect bandgap exhibits almost a linear relationship with Al composition, which is consistent with the theoretical calculation and indicates a small bowing effect and a good miscibility. The identification and modulation of (AlxGa1x)2O3 band structures allows rational design of ultra-wide bandgap oxide heterostructures for the applications in power electronics and solar-blind or X-ray detection. Show more