Metal-oxide interface reactions and their effect on integrated resistive/threshold switching in NbO x
Date
2020
Authors
Nath, Shimul Kanti
Nandi, Sanjoy
Li, Shuai
Elliman, Robert
Journal Title
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Volume Title
Publisher
Institute of Physics Publishing
Abstract
Reactive metal electrodes (Nb, Ti, Cr, Ta, and Hf) are shown to play an important role in controlling the volatile switching characteristics of metal/Nb2O5/Pt devices. In particular, devices are shown to exhibit stable threshold switching under negative bias but to have a response under positive bias that depends on the choice of metal. Three distinct responses are highlighted: Devices with Nb and Ti top electrodes are shown to exhibit stable threshold switching with symmetric characteristics for both positive and negative polarities; devices with Cr top electrodes are shown to exhibit stable threshold switching but with asymmetric hysteresis windows under positive and negative polarities; and devices with Ta and Hf electrodes are shown to exhibit an integrated threshold-memory (1S1M) response. Based on thermodynamic data and lumped element modelling these effects are attributed to the formation of a metal-oxide interlayer and its response to field-induced oxygen exchange. These results provide important insight into the physical origin of the switching response and pathways for engineering devices with reliable switching characteristics.
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Keywords
threshold switching, negative differential resistance, niobium oxides, reactive electrodes, interface reactions
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Source
Nanotechnology
Type
Journal article
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Access Statement
Open Access
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CC BY-NC-ND
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