The Contribution of Planes, Vertices, and Edges to Recombination at Pyramidally Textured Surfaces

Date

2011

Authors

Baker-Finch, Simeon
McIntosh, Keith

Journal Title

Journal ISSN

Volume Title

Publisher

IEEE Electron Devices Society

Abstract

We present a methodology by which one may distinguish three key contributors to enhanced recombination at pyramidally textured silicon surfaces. First, the impact of increased surface area is trivial and equates to a √3-fold increase in Seff,UL•. Seco

Description

Keywords

Keywords: Passivated surface; Process condition; Silicon surfaces; Surface area; Surface passivation; Surface recombinations; Surface textures; Textured surface; Thick oxides; Photovoltaic cells; Silicon; Silicon nitride; Silicon oxides; Surfaces; Textures; Passiva Photovoltaic cells; silicon; surface passivation; surface recombination; surface texture

Citation

Source

IEEE Journal of Photovoltaics

Type

Journal article

Book Title

Entity type

Access Statement

License Rights

DOI

10.1109/JPHOTOV.2011.2165530

Restricted until

2037-12-31