Effect of GaP strain compensation layers on rapid thermally annealed InGaAs∕GaAs quantum dot infrared photodetectors grown by metal-organic chemical-vapor deposition

Date

2007-08-15

Authors

Fu, Lan
McKerracher, I.
Jagadish, C.
Vukmirović, N.
Harrison, P.
Tan, Hark Hoe

Journal Title

Journal ISSN

Volume Title

Publisher

American Institute of Physics (AIP)

Abstract

The effect of GaP strain compensation layers was investigated on ten-layer InGaAs∕GaAsquantum dot infrared photodetectors(QDIPs) grown by metal-organic chemical-vapor deposition. Compared with the normal QDIP structure, the insertion of GaP has led to a narrowed spectral linewidth and slightly improved detector performance. A more significant influence of GaP was observed after the structure was annealed at various temperatures. While a similar amount of wavelength tuning was obtained, the GaPQDIPs exhibited much less degradation in device characteristics with increasing annealing temperature.

Description

Keywords

Keywords: Metallorganic chemical vapor deposition; Semiconducting gallium compounds; Strain; Thermal effects; Spectral linewidth; Wavelength tuning; Semiconductor quantum dots

Citation

Source

Applied Physics Letters

Type

Journal article

Book Title

Entity type

Access Statement

License Rights

DOI

10.1063/1.2770765

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