Spin dependent recombination based magnetic resonance spectroscopy of bismuth donor spins in silicon at low magnetic fields

Date

2012-08-22

Authors

Mortemousque, P. A.
Sekiguchi, T.
Culan, C.
Vlasenko, M. P.
Elliman, R. G.
Vlasenko, L. S.
Itoh, K. M.

Journal Title

Journal ISSN

Volume Title

Publisher

American Institute of Physics

Abstract

Low-field (6-110 mT) magnetic resonance of bismuth (Bi) donors in silicon has been observed by monitoring the change in photoconductivity induced by spin dependent recombination. The spectra at various resonance frequencies show signal intensity distributions drastically different from that observed in conventional electron paramagnetic resonance, attributed to different recombination rates for the forty possible combinations of spin states of a pair of a Bi donor and a paramagnetic recombination center. An excellent tunability of Bi excitation energy for the future coupling with superconducting flux qubits at low fields has been demonstrated.

Description

Keywords

Keywords: Low field; Low magnetic fields; Recombination centers; Recombination rate; Resonance frequencies; Signal intensity distribution; Spin state; Spin-dependent recombination; Superconducting flux; Tunabilities; Magnetic resonance; Magnetic resonance spectrosc

Citation

Source

Applied Physics Letters

Type

Journal article

Book Title

Entity type

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