InAs film grown on Si(111) by metalorganic Vapor Phase Epitaxy
Loading...
Date
Authors
Caroff, Philippe
Jeppsson, Mattias
Wheeler, D
Keplinger, M
Mandl, B
Stangl, J
Seabaugh, A
Bauer, G
Wernersson, Lars-Erik
Journal Title
Journal ISSN
Volume Title
Publisher
American Institute of Physics
Abstract
We report the successful growth of high quality InAs films directly on Si(111) by Metal Organic Vapor Phase Epitaxy. A nearly mirror-like and uniform InAs film is obtained at 580°C for a thickness of 2 μm. We measured a high value of the electron mobili
Description
Citation
Collections
Source
Journal of Physics: Conference Series
Type
Book Title
Entity type
Access Statement
License Rights
Restricted until
2037-12-31
Downloads
File
Description