Indium segregation and enrichment in coherent InxGa1-xAs/GaAs quantum dots

Date

1999

Authors

Liao, X Z
Zou, Jin
Cockayne, David John Hugh
Leon, R
Lobo, C

Journal Title

Journal ISSN

Volume Title

Publisher

American Physical Society

Abstract

Significant differences in the image features of InxGa1-xAs quantum dots (QDs) grown on (001) and vicinal (001) GaAs were seen in [001] on-zone bright-field transmission electron microscope images. Simulated images were obtained by modeling the strain field distribution of the QDs with finite element analysis and then using this model in dynamical electron diffraction contrast simulations. Comparison of the experimental images and the simulated images shows that (i) In segregation exists in the QDs and (ii) the average In content of the QDs is higher than the average In content of the film.

Description

Keywords

Keywords: Anisotropy; Computer simulation; Crystal orientation; Electron diffraction; Finite element method; Semiconducting indium gallium arsenide; Semiconductor growth; Strain; Stress concentration; Thin films; Transmission electron microscopy; Strain field distr

Citation

Physical Review Letters 82.25 (1999): 5148-5151

Source

Physical Review Letters

Type

Journal article

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